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| SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 4.5V @ VGS =2.5V Transistors IC High density cell design for extremely low RDS(ON). High power and handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID PD N-Channel 30 8 5.5 20 2 1.6 P- Channel 30 -8 -4 -20 Unit V V A A W PD 1 0.9 -55 to 150 78 40 W /W /W www.kexin.com.cn 1 SMD Type KDS8928A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time RDS(on) RDS(on) ID(on) gFS Ciss Coss P-Channel Crss td(on) tr td(off) VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Channel VDD = 6 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 P-Channel VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 (Note 2) (Note 2) IDSS IGSS VGS(th) Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs P-Channel Qgd VDS=-5V,ID=-4A,VGS=-5V(Note 2) N-Channel VDS =10V,ID=5.5A,VGS=4.5V(Note 2) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch A A Transistors IC Min 30 -20 Typ Max Unit V A, Referenced to 25 A, Referenced to 25 32 -23 1 -1 100 100 0.4 -0.4 0.67 -0.6 -3 4 0.025 0.03 0.031 0.038 0.043 0.055 .059 20 -20 20 13 900 1130 410 480 110 120 6 8 19 23 42 260 13 90 19.8 20 2 2.8 6.3 3.2 12 16 31 37 67 360 24 125 28 28 0.072 mV/ VDS = 24V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = VGS = 8V, VDS = 0 V 8 V, VDS = 0 V A nA V VDS = VGS, ID = 250 VDS = VGS, ID = -250 ID = 250 ID = -250 A, Referenced to 25 A, Referenced to 25 mV/ VGS = 4.5 V, ID =5.5A VGS = 2.5 V, ID = 4.5A VGS = -4.5 V, ID =-4 A VGS = -2.5 V, ID =-3.4 A VGS = 4.5 V, VDS = 5V VGS = -4.5 V, VDS = -5V VDS = 5V, ID = 5.5A VDS = -5V, ID = -4A N-Channel VDS = 10 V, VGS = 0 V,f = 1.0 MHz m A S pF pF pF ns ns ns Turn-Off Fall Time tf ns nC nC nC 2 www.kexin.com.cn SMD Type KDS8928A Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol IS VSD VGS = 0 V, IS = 1.3A (Not 2) VGS = 0 V, IS = -1.3A (Not 2) Testconditons N-Ch P-Ch N-Ch P-Ch Transistors IC Min Typ Max 1.3 -1.3 Unit A V 0.68 -0.7 1.2 -1.2 www.kexin.com.cn 3 |
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